Manufacture of photoelectric element integrated circuit device
文献类型：专利
| 作者 | KOBAYASHI MASAYOSHI; MORI MITSUHIRO; KANEKO TADAO; KOBASHI TAKAHIRO |
| 发表日期 | 1985-08-28 |
| 专利号 | JP1985165763A |
| 著作权人 | KOGYO GIJUTSUIN (JAPAN) |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of photoelectric element integrated circuit device |
| 英文摘要 | PURPOSE:To obtain electrodes of good flatness by forming, when forming ohmic electrodes on a GaAs substrate havig an N type conductive layer, them of a laminate of an AuGe layer, an Ni layer and an Au layer, specifying the ratio of thicknesses of the AuGe layer and the Ni layer, and heat treating it. CONSTITUTION:Tow N type layers 2 are formed by ion implanting on the surface layer of a semi-insulating GaAs substrate 1, and a shallow N type layer 3 is formed on the surface which includes the layers 2. Then, the entire surface is coated with an SiO2 film 4, a photoresist film 5 having holes 6 for forming ohmic electrodes are opened, and holes are opened on the region 2. Thereafter, an AuGe layer 7 which contains 4-8wt% of Ge, an Ni layer 8 which contains 0.1-0.2 of thickness ratio to the layer 7, and an Au layer 9 are laminated in the hole, heated at 360-410 deg.C in reduced atmosphere as ohmic electrodes. A laminate of a Ti layer 10, a Pt layer 11 and an Au layer 12 is provided on the layer 3 in the film 4 disposed between the electrodes. |
| 公开日期 | 1985-08-28 |
| 申请日期 | 1984-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89757]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN (JAPAN) |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAYOSHI,MORI MITSUHIRO,KANEKO TADAO,et al. Manufacture of photoelectric element integrated circuit device. JP1985165763A. 1985-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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