Semiconductor laser and its manufacture
文献类型：专利
| 作者 | ONAKA SEIJI; BAN YUZABURO; KIDOGUCHI ISAO |
| 发表日期 | 1992-08-10 |
| 专利号 | JP1992218993A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To lower the oscillation threshold by making small the astigmatic difference of a semiconductor laser, which is made of material such as A GaInP, and whose lateral mode is controlled. CONSTITUTION:This is equipped, on an n-type GaAs substrate 101, with an n-type A GaInP clad layer 102, an active layer 103, and a p-type A GaInP clad layer 104. Furthermore, thereon, an A InP shut-in layer 106 is formed, which has a stripe-shaped aperture and whose refractive index is smaller than that of the p-type A GaInP clad layer 104. Further, thereon, a p-type A GaAs upper clad layer 109 is made, whose band gap is wider and refractive index is lower than those of the ptype A GaInP clad layer 104. |
| 公开日期 | 1992-08-10 |
| 申请日期 | 1991-04-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89760]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,BAN YUZABURO,KIDOGUCHI ISAO. Semiconductor laser and its manufacture. JP1992218993A. 1992-08-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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