Semiconductor laser element
文献类型：专利
| 作者 | MORIKI KAZUNORI; OOSAWA JIYUN; IKEDA KENJI |
| 发表日期 | 1985-01-16 |
| 专利号 | JP1985007791A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To vary the radiation pattern individually by providing a branch wave- guide path for separating a part of the laser beam wave-guided into the main wave-guide path and emitting it outward and by providing an accepted light phase modulation part for varying the phase of the laser beam in a part of said branch path. CONSTITUTION:An n type main wave-guide path 11 is formed into a stripe form on a part of the main plane of the clad layer 2 on an n type crystal substrate 1 to wave-guide a laser beam. A p type active layer 3a is formed on the main plane of the wave-guide path 11 and n type branch wave-guide paths 12a and 12b are formed on the part on the both sides of the wave-guide path 11 on the main plane on the layer 2. The paths 12a and 12b connect with the wave-guide path 11 optically on the side of the end F2 and separate and emit a part of the laser beam from another side of the end F Each of the wave-guide paths 12a and 12b is provided with the accepted light phase modulation parts 13a and 13b for varying the phase of the laser beam emitted outward. Furthermore, drive electrodes 14a and 14b are formed corresponding to the modulation parts 13a and 13b to easily vary the pattern of emission toward the outside individually a part from the emission output. |
| 公开日期 | 1985-01-16 |
| 申请日期 | 1983-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89761]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | MORIKI KAZUNORI,OOSAWA JIYUN,IKEDA KENJI. Semiconductor laser element. JP1985007791A. 1985-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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