Semiconductor laser device
文献类型：专利
| 作者 | HASHIMOTO MASAFUMI |
| 发表日期 | 1981-11-21 |
| 专利号 | JP1981150888A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the detection of the output of a semiconductor laser device while induction radiating from a region of the device and to simply and sensitively detect the variation of the oscillation output of the device by forming a P-N junction for detecting the induction radiation output in the vicinity of the region for induction radiating. CONSTITUTION:A P-N junction semiconductor crystalline substrate 11 bonded in the removed state to form a strip-shaped recess groove at B part is formed at a P type semiconductor crystalline substrate 22 on an N type semiconductor crystalline substrate 21, the first clad layer 23, an active layer 24, the second clad layer 25 and an insulator thin film 26 are sequentially formed over the recess groove on a part of the substrate 11, and ohmic electrodes and hence the third electrode 28, the second electrode 29 and the first electrode 27 are sequentially formed respectively on the substrate 21, 22 and the second clad layer 25. When a suitable voltage is applied between the electrodes 27 and 28, an induction radiation (laser oscillation) occurs, and a laser spot 10 can be observed. When a voltage is so applied between the electrodes 29 and 28 as to apply a reverse bias to the junction 12 of the substrate 11, the laser light can be detected. |
| 公开日期 | 1981-11-21 |
| 申请日期 | 1980-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89766]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HASHIMOTO MASAFUMI. Semiconductor laser device. JP1981150888A. 1981-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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