Semiconductor device
文献类型：专利
| 作者 | OOMURA ETSUJI; ISHII JIYUN |
| 发表日期 | 1979-09-28 |
| 专利号 | JP1979124990A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To adhere a heat spreader composed of two kinds of metal to a heat sink hard enough in a region except the operating region of a semiconductor chip, without causing strain near the operating region. CONSTITUTION:On electrode 8 near luminous part 10 of semiconductor chip 1, metal layer 12 is formed approximate three times as wide as luminous part 10. This layer, plated with silver, copper, etc., is large in thermal conductivity and hard to be alloyed with In solder. On the remaining part on electrode 8, gold layer 13 is selectively formed which is easy to be alloyed with In. Heat spreaders 12 and 13 are mounted on heat sink 14 and then fixed by solder 15 and, in consequence, the solder remains as soft metal In is since layer 12 is never alloyed, so that no strain will appear in the active region of the chip. As a result, layer 13 is alloyed with In and comes in hard contact with the heat sink. |
| 公开日期 | 1979-09-28 |
| 申请日期 | 1978-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89768]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OOMURA ETSUJI,ISHII JIYUN. Semiconductor device. JP1979124990A. 1979-09-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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