Semiconductor laser device
文献类型：专利
| 作者 | HIRAO MOTONAO; NAKAMURA MICHIHARU; DOI KOUNEN; TSUJI SHINJI; TAKEDA YUTAKA; MORI TAKAO |
| 发表日期 | 1981-05-06 |
| 专利号 | JP1981049587A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the failure of a laser device by a construction wherein an P-N junction is provided in the crystal portion other than the active layer of a semiconductor laser device, and the density of impurities in this junction is controlled to keep it at the prescribed value, so that an excessive current bypasses the active layer. CONSTITUTION:N-type InP12, In0.73Ga0.27As0.63P0.37 active layer 13, and P-type InP14, P-type In0.83Ga0.27As0.37P0.63 15 layers are epitaxially grown on the surface (100) of an N-type InP substrate. An SiO2 mask 21 is provided in the direction (110), and the surface is etched by a mixed liquid of bromine and methanol to form a belt layer for enclosing light on the substrate 1 Next, P-type InP19 and N-type InP20 layers are laminated successively according to the prescribed density and thickness. After removing the oxide film on the surface, a eutective Au-Sn is evaporated on it, and a eutectic Cr-Au is evaporated on the p layer 15 side to form an electrode. Then it is cleaved at a right angle to the belt layer to complete a laser device. Since P-N-P-N junction is formed by layers 14-20-19-11 on the side of the buried layer, the current and voltage characteristics have a negative resisting region, so that it prevents the device from being destroyed even when an excessive current flows. |
| 公开日期 | 1981-05-06 |
| 申请日期 | 1979-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89777]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | HIRAO MOTONAO,NAKAMURA MICHIHARU,DOI KOUNEN,et al. Semiconductor laser device. JP1981049587A. 1981-05-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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