Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | SASAYA YUKIHIRO |
| 发表日期 | 1980-12-10 |
| 专利号 | JP1980158689A |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a stable single-lateral-mode oscillation by cutting out a portion of a current blocking layer provided between a semiconductor substrate and a lower clad layer in a stripe shape by the top of an edge-shaped mesa portion formed on the main surface of the substrate. CONSTITUTION:A (100) surface of an n-type GaAs substrate 20 is etched by liquid of H3PO4+H2O2, and an edge-shaped mesa 28 with a triangular cross section having a (111) surface in the direction of is formed. Then, a p-type Ga1-xAlxAs current blocking layer 21 is formed, and a portion of said layer 21 is cut with a mesa top 29. Then, n-type Ga1-xAlxAs 22, a p type GaAs active layer 23, Ga1-xAlxAs 24, and p-type GaAs 25 are stacked, and electrodes 26 and 27 are attached. In this constitution, layers 21-25 can be formed by one continuous epitaxial growth, the active layer is not exposed to the external air, defects are not generated, a cutout portion 29 can be readily formed with the edge-shaped area, the currents can be effectively concentrated, and the single lateral-mode oscillation can be stably performed. |
| 公开日期 | 1980-12-10 |
| 申请日期 | 1979-05-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89779]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES |
| 推荐引用方式 GB/T 7714 | SASAYA YUKIHIRO. Semiconductor light emitting device and manufacture thereof. JP1980158689A. 1980-12-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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