Semiconductor laser
文献类型：专利
| 作者 | AKIBA SHIGEYUKI; SUEMATSU YASUHARU; ARAI SHIGEHISA; KODAIRA MASANORI; ITAYA YOSHIO; IGA KENICHI; OOTA CHIYUUICHI; YAMAMOTO TAKAYA; SAKAI KAZUO |
| 发表日期 | 1981-03-18 |
| 专利号 | JP1981027987A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce the current necessary for oscillation of the semiconductor laser and to enable CW operation thereof at a room temperature by forming a clad layer on a light emitting layer in a multilayer architecture. CONSTITUTION:A buffer layer 11 made of InGaAsP is grown between the light emitting layer 3 and an InP 4. According to this architecture, even if the layer 3 is formed to 55m thick, a high quality hetero multilayer architecture can be obtained. Since the layer 3 is interposed between the InPs, injection carrier and light are effectively enclosed therein to perform the reduction of operating current for the semiconductor laser. |
| 公开日期 | 1981-03-18 |
| 申请日期 | 1979-08-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89780]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | AKIBA SHIGEYUKI,SUEMATSU YASUHARU,ARAI SHIGEHISA,et al. Semiconductor laser. JP1981027987A. 1981-03-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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