Semiconductor laser device
文献类型：专利
| 作者 | HATAGOSHI GENICHI; ISHIKAWA MASAYUKI; MOGI NAOTO |
| 发表日期 | 1989-03-29 |
| 专利号 | JP1989084685A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable the oscillation in TM mode to be performed, by providing a loss layer which has loss of absorption in the wavelength of laser oscillation in a clad layer and by making the loss in TE mode owing to the loss layer to be more large than that in the TM mode. CONSTITUTION:A clad layer 11, an active layer 12, clad layers 13, a contact layer 14, and a loss layer 15 are formed on a substrate 10, respectively. For the loss layer 15, both the thickness thereof and the distance from the active layer 12 are set so that the loss in TE mode is large compared with that in TM mode. As a result, the loss layer serves as the layer which has a large loss of absorption in the TE mode and thus the loss in the TM mode is made to be smaller than that in the TE mode. Therefore, the oscillation in the TM mode can be effectively performed. |
| 公开日期 | 1989-03-29 |
| 申请日期 | 1987-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89781]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | HATAGOSHI GENICHI,ISHIKAWA MASAYUKI,MOGI NAOTO. Semiconductor laser device. JP1989084685A. 1989-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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