Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | MATSUO NOZOMI; KAWAGUCHI MASAZUMI |
| 发表日期 | 1989-01-11 |
| 专利号 | JP1989007589A |
| 著作权人 | 古河電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To make it possible to control a diffusion front so that it is in a high degree of uniformity in its depth by forming an epitaxial film by an MOCVD technique, thereby forming an impurity diffusion region with a selective solid phase diffusion technique. CONSTITUTION:Laminated epitaxial layers are manufactured with an MOCVD (organometallic chemical vapor deposition) technique, that is, a vapor epitaxial growth technique which is performed according to the thermal decomposition reaction of II or III organic compounds and V or IV hydrogen compounds. Further, a doped oxide film 10 including diffused impurities is formed on an epitaxial and a stripe-like impurity diffusion region 7' is formed with a selective solid phase diffusion technique which performs heat treatment. Since a thermal treatment temperature in the case of diffusion can be suppressed at a low level, impurity distribution in crystals does not change during their thermal treatment and there is little or no change in the configuration of carrier concentration profile at a diffusion front. In this way, a high degree of uniformity in diffusion is attained. |
| 公开日期 | 1989-01-11 |
| 申请日期 | 1987-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89784]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 古河電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | MATSUO NOZOMI,KAWAGUCHI MASAZUMI. Manufacture of semiconductor light emitting element. JP1989007589A. 1989-01-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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