Buried semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | KATOU YOSHITAKE; NISHIMOTO HIROYUKI |
| 发表日期 | 1989-02-27 |
| 专利号 | JP1989050490A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To perform a highly efficiently oscillation and a high speed modulation by forming the interiors of two grooves between an active region is interposed of current blocking layers made of semi-insulating semiconductor, forming the side faces of the groove of a face (111) A, and forming its base of the same plane as the top of a clad layer under an active region. CONSTITUTION:An active region 3 on a semiconductor substrate 1 of its surface having a plane (100) is disposed in a bank interposed between two grooves 28, the interiors of the grooves 28 become current blocking layers 6, the side faces of the grooves 28 are formed of a plane (111) A, and the bottom is formed in the same plane as that of the upper face of a clad layer 4 under the region 3. Accordingly, since leakage currents at both sides of the region 3 are stopped by the layer 6, the leakage currents at his parts are remarkably reduced as compared with those of a conventional one. Thus, an oscillation of high efficiency is performed, and since there is no reverse n-p junction in the layer 6, its parasitic capacity becomes small, thereby performing a high speed modulation. |
| 公开日期 | 1989-02-27 |
| 申请日期 | 1987-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89786]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KATOU YOSHITAKE,NISHIMOTO HIROYUKI. Buried semiconductor laser and manufacture thereof. JP1989050490A. 1989-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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