Semiconductor device
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; ITOU MICHIHARU |
| 发表日期 | 1981-09-17 |
| 专利号 | JP1981118385A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To obtain an electrode with excellent ohmic contact for a multiple semiconductor of lead chalcogen group, by using gold with an addition of element which acts as an accepter to an electrode which has nonrectifying contact with a P type semiconductor surface. CONSTITUTION:A laser device 1 of pbsse consists of an N type part 2 and a P type part 3, and laser beam are radiated from a P-N junction surface 4 to the direction of arrowed L. As the material for a contact electrode 21 of the P type part 3 of the device 1 mixture of Se and Au is employed in this case. So an alloy of AuSe is evaporated to the surface of the region 3. Thereafter, when this chip is heated on a copper block 22 coated with In and turned into a chip bond, the Se atoms diffuse on the surface of the region 3. Then the surface part 1a of the region 3 becomes P type on the whole surface. Consequently an excellent ohmic electrical contact properties is obtained between the part 1a and the electrode 2 |
| 公开日期 | 1981-09-17 |
| 申请日期 | 1980-02-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89789]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,ITOU MICHIHARU. Semiconductor device. JP1981118385A. 1981-09-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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