中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor light amplifier

文献类型:专利

作者NAKAGOME YUKIO; AMANO KITSUTAROU; YAMAMOTO TAKAYA
发表日期1980-04-23
专利号JP1980055594A
著作权人KOKUSAI DENSHIN DENWA CO LTD
国家日本
文献子类发明申请
其他题名Semiconductor light amplifier
英文摘要PURPOSE:To totally reflect or partially reflect light incident on an active waveguide path in zigzag manner on the end surfaces thereof to amplify the same thereby to prevent the spreading of the pulse width and improve the gain. CONSTITUTION:Reflection preventive films 24 made of Al2O3 SiO, CaWO4 and the like are evaporated on parts at the end surfaces on which input light 6 is injected and parts at the end surfaces from which output light 7 is emitted. At the end surfaces on which light is reflected evaporated are dielectric films made of SiO, Al2O3 and the like in a certain length, and thereon provided is a reflection film 18 made of a metal such as copper, silver or the like. Light 6 propagates in the active layer at an angle theta' of deflection in correspondence to an angle theta of incidence, and advances in the width of a light waveguide path 51 along that direction. Thereafter, amplified light is picked up from the waveguide path 51 as a light 7.
公开日期1980-04-23
申请日期1978-10-19
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/89795]  
专题半导体激光器专利数据库
作者单位KOKUSAI DENSHIN DENWA CO LTD
推荐引用方式
GB/T 7714
NAKAGOME YUKIO,AMANO KITSUTAROU,YAMAMOTO TAKAYA. Semiconductor light amplifier. JP1980055594A. 1980-04-23.

入库方式: OAI收割

来源:西安光学精密机械研究所

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