Semiconductor laser
文献类型：专利
| 作者 | TERAMOTO IWAO; SUGINO TAKASHI; ITOU KUNIO |
| 发表日期 | 1982-01-16 |
| 专利号 | JP1982007990A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To limit the current to be flowed in a norrow striped region and to contrive to stabilize it by a method wherein a stepped section is formed on the surface of a layer and a conductive impurity region is formed besides the surface layer in such manner than the stepped section is included in this region. CONSTITUTION:An N-type clad layer 10, an N-type active layer 11, a P-type clad layer 12 and an N-type current limiting layer 13 are grown on an N-type substrate 9. Subsequently, a stepped section 14 is provided on the N-type current limiting layer 13. Then, a diffusion preventing film 15 is provided on the surface of the N-type current limiting layer 13, a stripe-shaped aperture w is provided in such manner that a stepped section 14 is included in it and zinc 16 is diffused. Then, after the diffusion preventing film 15 has been removed, the metal film 17 to be used for a P-side ohmic electrode is formed. Also, a metal film 18 to be used for an N-side ohmic electrode is provided on the substrate side. |
| 公开日期 | 1982-01-16 |
| 申请日期 | 1980-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89800]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TERAMOTO IWAO,SUGINO TAKASHI,ITOU KUNIO. Semiconductor laser. JP1982007990A. 1982-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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