Manufacture of semiconductor laser element
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; YOSHIKAWA MITSUO; ITOU MICHIHARU |
| 发表日期 | 1981-01-23 |
| 专利号 | JP1981006493A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To remove the residual adhesive from the surface of a multiple elements semiconductor thin layer without affecting th substrate or the like by etching the surface of the thin layer with a mixture solution of acetic acid and hydrogen peroxide once. CONSTITUTION:Pb1-xSnxTe crystalline layer containing different composition is formed as a buffer layer 2, an active layer 3 and a top layer 4 on a PbTe substrate 1 by a liquid phase epitaxial method. Thereafter, an etching solution containing acetic acid (containing 99% of CH3COOH) and hydrogen peroxide (containing 35% of H2O2) at 1:1 of volumetric ratio as mixed and heated at 40 deg.C is used to etch the surface of the top layer 4 of the substrate 1 for approx. 5-10min, and the layer 4 is then rinsed with water. |
| 公开日期 | 1981-01-23 |
| 申请日期 | 1979-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89803]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,YOSHIKAWA MITSUO,et al. Manufacture of semiconductor laser element. JP1981006493A. 1981-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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