Manufacture of banddlike semiconductor laser by selective melttback process
文献类型：专利
| 作者 | SUEMATSU YASUHARU; ARAI SHIGEHISA |
| 发表日期 | 1980-09-18 |
| 专利号 | JP1980121693A |
| 著作权人 | TOKYO KOGYO DAIGAKUCHO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of banddlike semiconductor laser by selective melttback process |
| 英文摘要 | PURPOSE:To eliminate the affection of gas etching to a band-like semiconductor laser by forming an InP layer forming the side wall of a striped recess of n-type and p-type conducting layers and enclosing a laser active region with a current limiting region formed with the layers and a substrate. CONSTITUTION:A GayIn1-yAsxP1-x layer 34 and an InP layer 35 are formed on an n-type InP layer 33 of a substrate 32. Then, an n-type InP layer 39, a GauIn1-uAsv P1-v layer 40, a p-type InP layer 14 and an n-type GasIn1-sAstP1-t layer 42 are sequentially grown in crystal to form a laser active region in the striped groove of the substrate so as to form a laser element. A photoresist or glass 43 is formed at the laser element, a striped groove 44 is formed thereat, a p-type impurity is diffused in the portion of the layer 42 thus exposed to form a high density impurity region 45, and electrodes 46, 47 are formed finally on both surfaces of the laser element to form a planar stripe laser. |
| 公开日期 | 1980-09-18 |
| 申请日期 | 1979-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89804]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO KOGYO DAIGAKUCHO |
| 推荐引用方式 GB/T 7714 | SUEMATSU YASUHARU,ARAI SHIGEHISA. Manufacture of banddlike semiconductor laser by selective melttback process. JP1980121693A. 1980-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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