Fabricating method of semiconductor laser element
文献类型：专利
| 作者 | ITOU MICHIHARU; SHINOHARA HIROYA; YOSHIKAWA MITSUO |
| 发表日期 | 1980-09-01 |
| 专利号 | JP1980113393A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Fabricating method of semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce the threshold current value of a semiconductor laser element at oscillation starting time by quenching the crystal of a second crystal layer formed on a first crystal layer from liquid phase and elminating the rugged phenomenon of crystal boundary surfaces. CONSTITUTION:Liquid reservoirs 31, 33, 35 forming a buffer layer, an active layer and a top layer are prepared on a carbon slider 37 when forming crystal layers of composition represented by Pb1-XSnXTe by a liquid phase epitaxial growing process. When the temperature in a furnace becomes predetermined temperature, the slider 37 is moved in a direction as designated by an arrow, the reservoir 31 is moved onto a dummy substrate 38 to precipitate the crystal layer in unstable composition on the substrate 38. Then, the slider 37 is moved to bring the liquid reservoir 31 onto a laser element substrate 40. Then, the substrate and the reservoir are quenched to form a buffer layer on the substrate 40 in this step. The reservoir 33 is moved onto the substrate 40 immediately before the liquid phase is solidified, an active layer is thus grown on the substrate 40. Then, the reservoir 35 is moved onto the substrate 40 to grow a top layer on the substrate 40. |
| 公开日期 | 1980-09-01 |
| 申请日期 | 1979-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89809]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | ITOU MICHIHARU,SHINOHARA HIROYA,YOSHIKAWA MITSUO. Fabricating method of semiconductor laser element. JP1980113393A. 1980-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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