Semiconductor light emitting element and fabricating the same
文献类型：专利
| 作者 | NAKAMURA MICHIHARU; HIRAO MOTONAO; YAMASHITA SHIGEO; FUKUZAWA KAORU; UMEDA JIYUNICHI |
| 发表日期 | 1980-09-09 |
| 专利号 | JP1980117295A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element and fabricating the same |
| 英文摘要 | PURPOSE:To conduct the modulation of a laser element through a third electrode by connecting an FET formed in monolithic manner to one electrode of a semiconductor laser element. CONSTITUTION:An n-type Ga0.7Al0.3As layer 22, an n-type GaAs layer 23, a p-type Ga0.7Al0.3As layer 24, a p-type Ga0.7Al0.3As25 layer and an n-type GaAs layer 26 are sequentially laminated, for example, on an n-type GaAs substrate 21, Al2O3 and SiO2 masks are provided thereon to diffuse Z to form a diffused region 32 reaching the layer 24. The mask 27 is then removed, an SiO2 film 29 is coated thereon, a resist mask 30 is provided thereon to etch the layers 29, 26 and 25 to form mesa groove 33 thereat. The layer 29 is then removed, and SiO2 film 34 is newly coated thereon, an opening is selectively perforated thereat to form source and drain electrodes 35 and 36 of AuGe alloy, Ni and Au layers, gate electrode 39 of Cr and Au layers, and to connect the electrode 39 to the electrodes 38, 35. According to this configuration, when predetermined voltage is applied between the electrode 36 and the substrate electrode 40, it is laser oscillated to produce a light output under the control by the gate voltage. When a sine wave is applied to the gate, extremely large modulation band can be obtained thereat. |
| 公开日期 | 1980-09-09 |
| 申请日期 | 1979-03-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89811]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | NAKAMURA MICHIHARU,HIRAO MOTONAO,YAMASHITA SHIGEO,et al. Semiconductor light emitting element and fabricating the same. JP1980117295A. 1980-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。