Semiconductor light source
文献类型：专利
| 作者 | KOBAYASHI NAOKI; HORIKOSHI YOSHIHARU |
| 发表日期 | 1981-03-14 |
| 专利号 | JP1981026484A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light source |
| 英文摘要 | PURPOSE:To make possible to take out much light by constructing a semiconductor light source of an active layer of InGaAsSb, a light guide layer of InGaAsSb or GaSb and a clad layer of AlGaAsSb whose compositions are each specified. CONSTITUTION:On an N type GaSb substrate 11, an N type AlGaAsSb first clad layer 12 and an N type light guide layer 13 of Inx'Ga1-x'ASy, Sb1-y' or GaSb are stacked and epitaxially grown. And further on them, an N type or P type InxGa1-x AsySb1-y active layer 14, a P type AlGaAsSb second clad layer 15 and a P type GaSb layer 16 are stacked in the same way and epitaxially grown. The relation of x and y are specified as x' |
| 公开日期 | 1981-03-14 |
| 申请日期 | 1979-08-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89818]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KOBAYASHI NAOKI,HORIKOSHI YOSHIHARU. Semiconductor light source. JP1981026484A. 1981-03-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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