Injection type semiconductor laser element
文献类型：专利
| 作者 | HAYASHI ITSUO; YONEZU HIROO |
| 发表日期 | 1980-05-12 |
| 专利号 | JP1980062792A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Injection type semiconductor laser element |
| 英文摘要 | PURPOSE:To positively avoid optical damage, by letting only a wave directing layer reach to a surface of reflection by making a band gap of the wave directing layer larger than that of an active layer. CONSTITUTION:A wave directing layer 12, an active layer 13 and a p-Al0.35Ga0.65 As-layer 14 are manufactured on a substrate 11 by means of a liquid-phase growth method. When letting currents flow in the forward direction through an electrode 15, electrons are injected to the thin active layer 13, gains are produced and currents hardly flow through the pn junction of the wave directing layer 12 and the layer 14 because a band gap is large. Only the waveguide 12 is let reach a surface of reflection by making the band gap of the wave directing layer 12 larger than that of the active layer. Thus, optical damage can positively be avoided. |
| 公开日期 | 1980-05-12 |
| 申请日期 | 1978-10-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89821]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | HAYASHI ITSUO,YONEZU HIROO. Injection type semiconductor laser element. JP1980062792A. 1980-05-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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