Manufacture of semiconductor laser
文献类型：专利
| 作者 | SAKUMA ISAMU; NISHIDA KATSUHIKO |
| 发表日期 | 1981-07-24 |
| 专利号 | JP1981091489A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To ensure the production of a semiconductor laser for a small operation current by forming a current-throttling diffused P layer using a diffusion method before second liquid phase growth. CONSTITUTION:The first clad layer 11 of a N type InP layer, and the second clad layers of InGaAsP transmission course layer 12, a P type InGaAsP active layer 13 and P type InP layer 14 epitaxially grown. Next, first etching is made starting with P type InP layer 14 side so that the layer 14 may remain in stripe form. Thereafter, impurities are diffused to extend from the surface of a substrate to the layer 1 Next, an active layer 13 converted into a P range is removed by second etching for exposing the surface of the layer 12. The second liquid phase expitaxial growth is made for burying the side face of the layer 13 in a third clad layer N type InP layer 15. |
| 公开日期 | 1981-07-24 |
| 申请日期 | 1979-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89822]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU,NISHIDA KATSUHIKO. Manufacture of semiconductor laser. JP1981091489A. 1981-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。