Preparation of semiconductor laser element
文献类型：专利
| 作者 | OOSAKA SHIGEO; FUJIWARA KANJI; FUJIWARA TAKAO |
| 发表日期 | 1981-04-16 |
| 专利号 | JP1981040291A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Preparation of semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain an excellent resonator by forming a plurality of stripe-shaped light-emitting regions in a semiconductor wafer, providing on the wefer surface corresponding to them stripe-shaped electrodes continuous over the upper surface of each element, and cutting the wafer in the direction perpendicular to the electrodes in order to use the cut surfaces as resonance surfaces. CONSTITUTION:On an N type GaAs substrate 1; an N type GaAlAs clad layer 2, P type GaAs active layer 3, P type GaAlAs clad layer 4 and N type GaAlAs cap layer 5 are successively grown by the liquid phase epitaxy. In the layer 5, a plurality of P type stripe-shaped light-emitting regions 8 extending into the layer 4 are produced at given intervals by diffusion, and continuous stripe-shaped electrodes 9 of Au or the like are provided on the regions 8. After that, scribe lines 11 are made perpendicularly to the electrodes 9, and a pressure is applied to the lower surface of this to separate it into pellets. This prevents the cuts due to the scribing from reaching the substrate Therfore, the cut surfaces to be used as resonance surfaces 16 are clean, so that an excellent resonator are obtained. |
| 公开日期 | 1981-04-16 |
| 申请日期 | 1979-09-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89827]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OOSAKA SHIGEO,FUJIWARA KANJI,FUJIWARA TAKAO. Preparation of semiconductor laser element. JP1981040291A. 1981-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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