Semiconductor laser element
文献类型：专利
| 作者 | UMEDA JIYUNICHI; KASHIMURA TAKASHI; KURODA IKUROU; YAMASHITA SHIGEO |
| 发表日期 | 1981-07-04 |
| 专利号 | JP1981081993A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a large power semiconductor laser having uniform phase of laser light in every stripe by forming of a crystal substrate, a buffer layer, an active layer, a clad layer, a stripe region and upper and lower metal electrodes. CONSTITUTION:When predetermined bias current is flowed between the electrodes with the upper electrode positive, a current will flow in a circuit of an upper electrode, a stribe region 16, a clad layer 14, an active layer 13, a clad layer 12, a substrate 11 and a lower electrode (not shown). Accordingly, the current will flow mainly through the active region 131 of the active layer 13 confronting the stripe region 16. Consequently, the resonance laser light can be obtained in the active region 131, the light is enclosed optically or electromagnetically by the clad layer 14 and the buffer layer 12 of different refractive indexes, is reciprocated between the mirror surfaces 18, and after sufficient energy is obtained, radiating laser light 19 is irradiated externally from the mirror surface 18. |
| 公开日期 | 1981-07-04 |
| 申请日期 | 1979-12-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89829]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | UMEDA JIYUNICHI,KASHIMURA TAKASHI,KURODA IKUROU,et al. Semiconductor laser element. JP1981081993A. 1981-07-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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