Wavelength tunable semiconductor laser
文献类型：专利
| 作者 | YANO MITSUHIRO |
| 发表日期 | 1989-03-17 |
| 专利号 | JP1989072583A |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Wavelength tunable semiconductor laser |
| 英文摘要 | PURPOSE:To increase the width of variation of an emitted light wavelength by forming a waveguide having a variable refractive index in a superlattice structure formed of a base crystal layer and a single crystal layer having smaller energy gap than that of the base layer, and forming the thickness of the single crystal layer so as to sequentially increase the thickness toward a separation from its center. CONSTITUTION:An optical resonator is provided in a semiconductor single crystal, and a voltage is applied to the part of the waveguide of the resonator to vary the refractive index of the waveguide. In such a semiconductor laser, the waveguide having the variable refractive index is formed in a superlattice structure formed of a base crystal layer and a single cryltal layer having smaller energy gap than that of the base crystal in such a manner that the thicknesses of the single crystal layers each having the small energy gap are so increased sequentially toward a separation from its center. For example, the superlattice layer 3b is formed of an InGaAsP layer for forming a quantum well and an InP layer of a barrier layer, and the thickness of the two n-th InGaAsP layers counted from the central layer are set to (1+alphan2)W0 with respect to the thickness W0 of the InGaAsP layer disposed at the center. |
| 公开日期 | 1989-03-17 |
| 申请日期 | 1987-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89830]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | YANO MITSUHIRO. Wavelength tunable semiconductor laser. JP1989072583A. 1989-03-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。