Oscillating frequency stabilized semiconductor laser device
文献类型：专利
| 作者 | MUKAI TAKAAKI; SUGIMURA AKIRA; YAMAMOTO YOSHIHISA |
| 发表日期 | 1981-11-21 |
| 专利号 | JP1981150887A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Oscillating frequency stabilized semiconductor laser device |
| 英文摘要 | PURPOSE:To approach the temperature variation of the optical passage of an external resonator attached to a semiconductor laser element to zero by forming an air layer exhibiting negative refractive index temperature property in the resonator and suitably selecting the length of the air layer. CONSTITUTION:A semiconductor laser element 4 is mounted through a heat sink 5 on the left side projection of an external resonator body 1, and the right side end face of the laser element 4 is coated with a nonreflection coating of SiO2 or Si3N4 or the like. A condensing microlens 6 having a length of 1/4 period for converting the output light into parallel beam is provided adjacent to the right side of the laser element 4 at the left side projection, and the microlens 6 is covered with a nonreflection coating of SiO2 or Si3N4 or the like. A plane mirror 7 is integrally formed with the end face of the air layer 3 of the right side projection of the resonator body Since the temperature coefficient of the refractive index of the air layer 3 has negative symbol, the temperature variation of the optical passage of the resonator 1 can be approached to zero by selecting suitably the length L3 of the air layer 3, thereby remarkably improving the stability. |
| 公开日期 | 1981-11-21 |
| 申请日期 | 1980-04-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89831]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | MUKAI TAKAAKI,SUGIMURA AKIRA,YAMAMOTO YOSHIHISA. Oscillating frequency stabilized semiconductor laser device. JP1981150887A. 1981-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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