Manufacture of semiconductor laser element
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; YOSHIKAWA MITSUO; ITOU MICHIHARU |
| 发表日期 | 1981-02-21 |
| 专利号 | JP1981018485A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To improve the adhesion between a substrate and an electrode in a semiconductor laser element by forming the surface of an Au electrode on an anode oxide film becoming an insulating film in flat and smooth state without rugged state. CONSTITUTION:A buffer layer 2, an active layer 3 and a top layer 4 are formed by liquid phase epitaxial process on a PbTe substrate Thereafter, the substrate is mesa etched in predetermined size, the contact portion A between the substrate and the electrode is then removed to form an anode oxide film 7 on the surface of the substrate. Then, the substrate formed with the film 7 is heated in nitrogen or argon gas atmosphere of high purity. In this manner, the anode oxide film 7 becomes dense. |
| 公开日期 | 1981-02-21 |
| 申请日期 | 1979-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89833]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,YOSHIKAWA MITSUO,et al. Manufacture of semiconductor laser element. JP1981018485A. 1981-02-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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