Semiconductor laser
文献类型：专利
| 作者 | HORIKOSHI YOSHIHARU; KAWASHIMA MINORU |
| 发表日期 | 1980-06-04 |
| 专利号 | JP1980074196A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a threshold value of a current by concentrating a current into a portion of an active layer by untilizing the spread resistance of the active layer. CONSTITUTION:On a p-type crystal substrate 1, an n-type layer 2 wherein the width of a forbidden band which is to become a clad layer is E1 and the refractive index is n1, a p-type layer 3 wherein the width of a forbidden band which is to become an active layer is E2 and the refractive index is n2, and an n-type layer 4 wherein the width of a forbidden band which is to become a clad layer is E3 and the refractive index is n3 are epitaxially grown sequentially. In this case, n2>n1, n3; E2 |
| 公开日期 | 1980-06-04 |
| 申请日期 | 1978-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89837]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | HORIKOSHI YOSHIHARU,KAWASHIMA MINORU. Semiconductor laser. JP1980074196A. 1980-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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