Method of epitaxial growth at liquid phase
文献类型：专利
| 作者 | NAKAI SABUROU |
| 发表日期 | 1980-04-23 |
| 专利号 | JP1980055522A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of epitaxial growth at liquid phase |
| 英文摘要 | PURPOSE:To prevent granular defective rich parts from taking place, by producing an additional epitaxially grown layer which corresponds to a final epitaxilly grown layer and differs in composition therefrom, cooling the additional layer and thereafter etching it to expose the final layer. CONSTITUTION:A prescribed number of layers are epitaxially grown. An additional layer of InGaAsP or InP, which differs in composition from the final epitaxially grown layer and corresponds thereto, is also epitaxially grown. After the additional layer is cooled, it is etched to expose the final epitaxially grown layer. |
| 公开日期 | 1980-04-23 |
| 申请日期 | 1978-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89840]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NAKAI SABUROU. Method of epitaxial growth at liquid phase. JP1980055522A. 1980-04-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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