Semiconductor laser device
文献类型：专利
| 作者 | YANO MORICHIKA; YAMAMOTO SABUROU; KURATA YUKIO; MATSUI KANEKI; HAYAKAWA TOSHIROU; TAKIGUCHI HARUHISA |
| 发表日期 | 1981-09-12 |
| 专利号 | JP1981116688A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To facilitate manufacture of a semiconductor laser device and improve its reliability by surrounding the mesa structure with a photoresist. CONSTITUTION:On an N type semiconductor substrate 1, an N type layer 2, a P type layer 3 to be an active region, a P type layer 4 and a P type layer 5 are successively grown. Then, mesa etching is applied to the layers 2-5 so as to reach the substrate Then, the mesa structure portion is coated with a photoresist 6 so that the surface of the layer 5 is exposed from the resist 6. Then, an electrode 8 is formed over the layer 5 and the resist 6, and another electrode 9 on the substrate Thereby, the resist 6, which has a lower refractive index than the layer 3 as an active region, can trap the light from the layer 3. By said structure, the number of the liquid phase epitaxial growth needed for manufacture of a laser device can be reduced to only one, so that the manufacture is facilitated as well as the reliability is improved. |
| 公开日期 | 1981-09-12 |
| 申请日期 | 1980-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89842]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YANO MORICHIKA,YAMAMOTO SABUROU,KURATA YUKIO,et al. Semiconductor laser device. JP1981116688A. 1981-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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