Semiconductor laser
文献类型：专利
| 作者 | SAKUMA ISAMU; NISHIDA KATSUHIKO |
| 发表日期 | 1980-11-01 |
| 专利号 | JP1980140285A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a fundamental lateral mode oscillation of a semiconductor laser without altering the thickness of an active layer by forming a groove at the center on the surface of a semiconductor substrate when forming the active layer on the substrate, and growing the active layer through a light guide and a carrier enclosure layer on the entire surface including the groove. CONSTITUTION:A photoresist film having an opening is formed on the surface of an n-type InP substrate 8, etched to form a fine V-shaped groove 15 at the center on the surface of the substrate 8. Then, the resist film is removed, and n-type In0.88Ga0.12As0.26P0.74 light guide and carrier enclosure layer 9, p-type In0.77Ga0.23 Ga0.51P0.49 active layer 10, p-type InP photon and carrier enclosure layer 11 are sequentially laminated on the entire surface thereof, and liquid phase is epitaxially grown to form a rectifying junction 16 in the boundary between the layer 9 and 10. Then, an SiO2 film 12 is coated on the surface of the layer 11, an opening is perforated corresponding to the groove 15, a p-type electrode 14 is coated on the surface of the exposed layer 11, and an n-type electrode 13 is coated on the back surface of the substrate 8. Thus, since it is not necessary to alter the thickness of the layer 10, it improves its reproducibility. |
| 公开日期 | 1980-11-01 |
| 申请日期 | 1979-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89858]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SAKUMA ISAMU,NISHIDA KATSUHIKO. Semiconductor laser. JP1980140285A. 1980-11-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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