Manufacture of semiconductor wafers
文献类型:专利
作者 | KUSUKI TOSHIHIRO; AKITA KENZOU; FURUMIYA SATOSHI; YAMAGUCHI AKIO |
发表日期 | 1981-09-12 |
专利号 | JP1981116616A |
著作权人 | FUJITSU LTD |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Manufacture of semiconductor wafers |
英文摘要 | PURPOSE:To try the improvement of yield by filling a plurality of growth melt materials in a reservoir for solution wherein the materials are split into small reservoirs and liquidus epitaxial growth is performed by filling obtained melts for growth in a slide boat. CONSTITUTION:A plurality of In, Ga, As, P are weighed to fill them in a reservoir 5 and a plummet 7 and a cover 8 are set. When materials are dissolved and homogenized, a pedestal 4 is moved to fit a hole with a reservoir 2 and melts 9 are filled in the reservoir 2. Finally, the remaining melts are exhausted to a reservoir 3. The lengths l2 of the pedestal 4 is longer than the width l1 of the arranged reserovirs 2 to prevent the evaporation of P, As. Next, solutions in the reservoirs 2 are solidified and taken out from the reservoirs 2 to obtain many small grains. In this composition, weighing accuracy will be improved and many melts of the same composition will be made at a time. Therefore, the yield of epitaxial wafers will be improved by using these small grains. |
公开日期 | 1981-09-12 |
申请日期 | 1980-02-20 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/89859] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU LTD |
推荐引用方式 GB/T 7714 | KUSUKI TOSHIHIRO,AKITA KENZOU,FURUMIYA SATOSHI,et al. Manufacture of semiconductor wafers. JP1981116616A. 1981-09-12. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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