Optical semiconductor element
文献类型：专利
| 作者 | USAMI MASASHI; AKIBA SHIGEYUKI; UKO KATSUYUKI; MATSUSHIMA YUICHI |
| 发表日期 | 1989-01-13 |
| 专利号 | JP1989011391A |
| 著作权人 | 国際電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor element |
| 英文摘要 | PURPOSE:To scarcely saturate an output light even at the time of high output operation and to provide stable output characteristic by varying in advance an electric resistance per unit volume in a section having a maximum light intensity distribution of irregular light intensity distribution characteristics along a light propagating direction. CONSTITUTION:A zinc diffused region 11 having an irregular density is formed along the light propagating direction in a P-type InP clad layer 5 and a P-type InGaAsP cap layer 7, and its electric resistivity is varied. In order to spatially control the zinc diffusing density, a diffusing window of suitable density is formed by an adequate mask pattern at a diffusing mask material to be performed. The resistivity is inversely proportional to the zinc diffusing density. The current density distribution to be injected to an active layer 3 has a distribution responsive to the resistivity. Accordingly, the distribution of carrier density in the light propagating direction becomes substantially uniform by controlling the zinc diffusing density so that the resistivity becomes inversely proportional to the light intensity distribution, and a spatial hole burning does not occur. The forward output light is not saturated even at the time of injecting a high current, sole wavelength characteristic is not deteriorated, and stable laser characteristic can be performed. |
| 公开日期 | 1989-01-13 |
| 申请日期 | 1987-07-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89862]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 国際電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | USAMI MASASHI,AKIBA SHIGEYUKI,UKO KATSUYUKI,et al. Optical semiconductor element. JP1989011391A. 1989-01-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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