Semiconductor laser device
文献类型：专利
| 作者 | KUWABARA HIDEO |
| 发表日期 | 1980-03-19 |
| 专利号 | JP1980039612A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To effect an improvement in the distinction ratio by leaving the thin clad layer contacted with the active layer in the vicinity of the emission and of the laser element and providing the metal layer thereon. CONSTITUTION:Laser beam is emitted in TE (Transverse-electric) mode, but spontataneous light emission includes planes of polarization at random, namely TM (Transverse-magnetic) mode. After etching clad layers 11 and 12 contacted with an active layer 13 in the vicinity of an emission end 10a of a laser element to be left thin layers, thus remained clad layer 11 is coated with a metal layer 18. With this arrangement, the absorption factor for TM mode included in spontaneous light emission becomes to be large, thereby leading to the reduction inemission level of spontaneous light and improvement in distinction ratio. |
| 公开日期 | 1980-03-19 |
| 申请日期 | 1978-09-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89865]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUWABARA HIDEO. Semiconductor laser device. JP1980039612A. 1980-03-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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