Manufacture of injection type laser
文献类型：专利
| 作者 | SUZAKI WATARU; MUROTANI TOSHIO; OOMURA ETSUJI; ISHII JIYUN |
| 发表日期 | 1981-12-07 |
| 专利号 | JP1981158496A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of injection type laser |
| 英文摘要 | PURPOSE:To facilitate the manufacture of the injection type laser wherein a crescent shaped active region is embeded, by forming a dove tail shaped groove on a semiconductor substrate and reducing the decomposition of the crystal surface due to evaporation of P during the crystal growth. CONSTITUTION:On the top surfacd 105 of the N-InP substrate 1, N-InGaAsP 100, P-InP 200, and N-InGaAsP 300 are sequentially formed. The dove tail shaped groove is formed in the surface of the N-InGaAsP 300 by photo lithographic technique and selective etching technique. On the substrate 1 on which said groove is formed, are grown N-InP 2, P-InGaAsP 3, P-InP 4, and P-InGaAsP 5 by liquid phase epitaxial method. By forming the dove tail groove, the decomposition of the crystal surface due to the evaporation of P during the crystal growth is reduced, and the injection type laser wherein the crescent active region is embeded is constituted. |
| 公开日期 | 1981-12-07 |
| 申请日期 | 1980-05-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89871]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SUZAKI WATARU,MUROTANI TOSHIO,OOMURA ETSUJI,et al. Manufacture of injection type laser. JP1981158496A. 1981-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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