Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | FURUYAMA HIDETO; KUROBE ATSUSHI |
| 发表日期 | 1989-03-24 |
| 专利号 | JP1989080087A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a high-efficiency and highly reliable semiconductor laser by a method wherein the characteristics of the respective impurities of n-type and p-type buried regions are applied sufficiently to practical use in the formation of the buried regions. CONSTITUTION:i-type AlGaAs clad layers 2 and 4 and a quantum well active layer 3 are formed on an i-type GaAs substrate Then, an n-type GaAs ohmic contact layer 5, an n-type impurity diffused region 6, a p-type AlGaAs buried layer 7, a p-type impurity diffused layer 8 and a p-type GaAs ohmic layer 9 are formed in order. Moreover, electrodes 10 and 11 are formed. A laser oscillation is performed at an active region 3' pinched by the region 6 and the layer 7. By diffusing Si in the region 6 at high temperature, an n-type buried region having a forbidden band width close to that of the clad layers can be formed and the layer 7 can comparatively select freely the forbidden band width of its constituent crystal. |
| 公开日期 | 1989-03-24 |
| 申请日期 | 1987-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89874]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,KUROBE ATSUSHI. Semiconductor laser and manufacture thereof. JP1989080087A. 1989-03-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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