Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; YANO MORICHIKA; KURATA YUKIO; MATSUI KANEKI; HAYAKAWA TOSHIROU; TAKIGUCHI HARUHISA |
| 发表日期 | 1981-07-24 |
| 专利号 | JP1981091490A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To make lateral mode stable fine spot oscillation and reduce the threshold value current by forming a laser oscillation range with the central portion at the center of the 2-step type V-groove of the surface of a substrate crystal of a first clad layer grown thicker than the other portions. CONSTITUTION:A current limiting layer 16 is ipitaxially grown on the surface of a substrate crystal, and a 2-stage type V-groove 20 is provided of which the opening angle at the center there of is smaller than that at the both side portions. A double hetero-structure is formed by growing a first clad layer 13 and a second clad layer 14 of N type so that a P type active layer 12 may be sandwiched therebetween. Only the central portion where the opening angle of the groove 20 is small of the layer 13 is grown thick to form a laser oscillation range and the other portions is grown thin to form luminescence absorbing range by extremely cutting down growth duration. Thereby, lateral mode stable fine spot oscillation can be obtained. |
| 公开日期 | 1981-07-24 |
| 申请日期 | 1979-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89877]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,YANO MORICHIKA,KURATA YUKIO,et al. Semiconductor laser element. JP1981091490A. 1981-07-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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