Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | NISHI HIROSHI; YANO MITSUHIRO; KUMAI TSUGIO; TAKUSAGAWA KIMITO |
| 发表日期 | 1980-07-19 |
| 专利号 | JP1980095386A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a light emitting region of a narrow width and stabilize the lateral mode oscillation by a method wherein the center part of the loss region constituting a light emitting device of a double hetero-junction stripe structure is removed by etching, and while this place is being filled, a waveguide layer is formed on it. CONSTITUTION:An n-type InP clad layer 2, In0.76Ga0.24As0.55P0.45 active layer 3, p-type InP clad layer 4, n-type In0.76Ga0.24As0.55P0.45 loss layer 5 are grown epitaxially in liquid phase on n-type InP substrate 1 having face (100). Next, p-type region 9 is diffused into the center of layer 5. By selective etching, a depression is formed in layer 9. Subsequently, while this depression is being filled, p-type InP waveguide layer 6 is grown epitaxially on the entire surface. Then, Au-Zn electrode 7 is fitted on the front side, and also Au-Zn electrode 8 is fitted on the back side. By this, layer 9 functions as a current blocking region, a light emitting region of a narrow width is obtained, and the lateral mode becomes a single basic mode. |
| 公开日期 | 1980-07-19 |
| 申请日期 | 1978-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89878]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHI HIROSHI,YANO MITSUHIRO,KUMAI TSUGIO,et al. Manufacture of semiconductor light emitting device. JP1980095386A. 1980-07-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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