Semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI NAOKI; HORIKOSHI YOSHIHARU |
| 发表日期 | 1980-06-28 |
| 专利号 | JP1980086179A |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a flat active layer in which traps, which become non-light- emitting re-bonding centers, are small, by arranging on an In substrate an InP clad layer, and an active layer, a buffer layer and a clad layer, each consisting of specified proportions of In, Ga, As and P. CONSTITUTION:n-Type InP clad layer 42, InxGa1-xAsyP1-y active layer 43, p-type Inx'Ga1-x'Asy'P1-y' buffer layer 44, p-type Inx''Ga1-x''Asy''P1-y clad layer 45 are formed on n-type InP substrate 41; where 0y'>y''>0. As a result, four-element buffer layer 44, whose composition is close to that of active layer 44 and whose band gas is slightly larger, has been formed on acitve layer 43. By this, the meltback of the active layer is suppressed and the active boundary surface is made extremely flat. Further, traps, which become non-light-emitting re-bonding centers, on the boundary surface are reduced, and oscillation can be done at wavelengths 4-7mum at room temperature. |
| 公开日期 | 1980-06-28 |
| 申请日期 | 1978-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89879]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | KOBAYASHI NAOKI,HORIKOSHI YOSHIHARU. Semiconductor laser. JP1980086179A. 1980-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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