Manufacture of semiconductor laser
文献类型：专利
| 作者 | MUROTANI TOSHIO; OOMURA ETSUJI; ISHII JIYUN |
| 发表日期 | 1981-03-10 |
| 专利号 | JP1981024995A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To contrive the improvements in quantum efficiency of the semiconductor laser and the lifetime thereof by melting back a mesa structure with In solution without large deformation immediately before growing P type InP by liquid phase epitaxially on the surface of a smeiconductor crystal having mesa structure and removing the impurity on the surface and deformed layer thereon. CONSTITUTION:An N type InGaAsP 2, P type InP 3 and InGaAsP 8 are laminated on one main surface of an N type InP substrate An SiO2 mask is coated thereon to form the mesa structure thereon, is contacted with In solution at 630 deg.C for approx. 1 sec. to melt back it. At this time Ga is dissolved in the In solution, and InP 3 is hardly etched not to deform the mesa structure. Then, an insulating layer 5 is coated thereon, and electrodes 6, 7 are attached thereto. Since the lateral enclosure layer of the active layer 3 is grown subsequently to the melt-back in this manner, there can be obtained a buried hetero structure having less defects to lower the oscillation threshold value and to increase the lifetime thereof in the laser. |
| 公开日期 | 1981-03-10 |
| 申请日期 | 1979-08-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89882]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MUROTANI TOSHIO,OOMURA ETSUJI,ISHII JIYUN. Manufacture of semiconductor laser. JP1981024995A. 1981-03-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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