Manufature of semiconductor laser
文献类型：专利
| 作者 | NISHIDA KATSUHIKO |
| 发表日期 | 1981-07-22 |
| 专利号 | JP1981090587A |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufature of semiconductor laser |
| 英文摘要 | PURPOSE:To provide a laser having a single mode oscilation by a method wherein P type impurities are introduced at both sides of stripe area to read up to the first N type clad layer, a semiconductor layer having a wider prohibitive N type band width than that of the active layer is buried at a place where both second clad layer and the active layer are removed at both sides of the stripe area. CONSTITUTION:N type InP 2, P type InGaAsP active layer 3, and P type InP 4 are overlapped in N type InP base plate Zn dispersion layer 6 is made at a place except the stripe area 5, Zn is dispersed in the layer 2 to form P layer 6. Then, a place other than the area 5 is mesa etched, N type InP 8 is formed in the etched part to complete a hetero structure. Application of a foreward biasing voltage causes electrons and positive holes to be fed into the active layer to make a laser oscilation. At a place except the stripe area, a reverse biasing is made between Zn dispersion layer 6 and N type InP 8 to prevent a leakage of electric currnt. With this arrangement, it is possible to make a single mode laser having a high efficiency of fine molecular weight with a low sheath electric current. |
| 公开日期 | 1981-07-22 |
| 申请日期 | 1979-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89890]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NISHIDA KATSUHIKO. Manufature of semiconductor laser. JP1981090587A. 1981-07-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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