Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | NISHI HIROSHI; YANO MITSUHIRO; KUMAI TSUGIO; TAKUSAGAWA KIMITO |
| 发表日期 | 1980-06-17 |
| 专利号 | JP1980080386A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To simplify and stabilize transverse mode oscillation and thus to improve light emitting characteristic by a method wherein a current carrying region is formed to have its width almost equalized to that of a light emitting region, and an electrode is provided on an activated layer through a thin clad layer. CONSTITUTION:An n-type InP clad layer 2, In0.78Ga0.24As0.55.P0,45 activated layer 3, thin p-type InP clad layer 4, p-type In0.76Ga0.24As0.55P0.45 loss layer 5 are laminated on an n-type InP substrate 1, and a groove with width w is formed on the layer 5. An n-type InP waveguide layer 6 and a junction layer 7 of p-type In0.76Ga0.24As0.55P0.45 are further formed thereon, and then an Au mask with width s is provided to proton implantation, thereby preventing a current between electrodes 7, 8 from flowing in region 9. The width w of a current carrying region and the width s of a light emitting region are thus arranged to be almost equalized, and the clad layer 4 on the activated layer 3 is made thin, therefore a transverse mode according to the loss layer 5 and the waveguide layer 6 is unified and stabilized, and the linearity of a light output is improved. |
| 公开日期 | 1980-06-17 |
| 申请日期 | 1978-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89893]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHI HIROSHI,YANO MITSUHIRO,KUMAI TSUGIO,et al. Manufacture of semiconductor light emitting device. JP1980080386A. 1980-06-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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