Method of epitaxially growing in liquid phase
文献类型：专利
| 作者 | URAGAKI TAMOTSU; INOUE MORIO; FURUIKE SUSUMU; IWASA HITOO |
| 发表日期 | 1980-07-23 |
| 专利号 | JP1980096629A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of epitaxially growing in liquid phase |
| 英文摘要 | PURPOSE:To continuously form a second epitaxial layer on a semiconductor substrate by contacting the substrate with a solution containing a conductivity determining impurity to form a conductivity type epitaxial layer on the substrate, then performing vacuum extraction to evaporate the impurity in the solution to thus lower the concentration of the impurity in the solution. CONSTITUTION:Solute and conductivity determining impurity are added to a solvent as a solution in a solution tank. A semiconductor substrate is contacted with the solution to form a first conductivity epitaxial layer on the substrate. Then, the tank is evacuated into vacuum to partially evaporate the impurity in the solution to thereby lower the concentration of the impurity in the solution. The substrate formed with the first conductivity epitaxial layer is contacted with the solution thus lowered with the concentration of the impurity to further grow a second conductivity epitaxial layer on the first epitiaxial layer. Thus, the concentration of the impurity is controlled independently with one solution tank, thereby continuously forming the first and second conductivity epitaxial layers on the substrate. |
| 公开日期 | 1980-07-23 |
| 申请日期 | 1979-01-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89894]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | URAGAKI TAMOTSU,INOUE MORIO,FURUIKE SUSUMU,et al. Method of epitaxially growing in liquid phase. JP1980096629A. 1980-07-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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