Semiconductor light emitting element
文献类型：专利
| 作者 | KUROSAKA, YOSHITAKA; TAKIGUCHI, YUU; SUGIYAMA, TAKAHIRO; HIROSE, KAZUYOSHI; NOMOTO, YOSHIRO |
| 发表日期 | 2019-08-20 |
| 专利号 | US10389088 |
| 著作权人 | HAMAMATSU PHOTONICS K.K. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0 |
| 公开日期 | 2019-08-20 |
| 申请日期 | 2016-03-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89928]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HAMAMATSU PHOTONICS K.K. |
| 推荐引用方式 GB/T 7714 | KUROSAKA, YOSHITAKA,TAKIGUCHI, YUU,SUGIYAMA, TAKAHIRO,et al. Semiconductor light emitting element. US10389088. 2019-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。