HYBRID INTEGRATION BASED ON WAFER-BONDING OF DEVICES TO AISb MONOLITHICALLY GROWN ON Si
文献类型：专利
| 作者 | HUFFAKER, DIANA L.; DAWSON, LARRY R.; BALAKRISHNAN, GANESH |
| 发表日期 | 2007-11-29 |
| 专利号 | US20070275492A1 |
| 著作权人 | STC.UNM |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | HYBRID INTEGRATION BASED ON WAFER-BONDING OF DEVICES TO AISb MONOLITHICALLY GROWN ON Si |
| 英文摘要 | Exemplary embodiments provide a semiconductor fabrication method including a combination of monolithic integration techniques with wafer bonding techniques. The resulting semiconductor devices can be used in a wide variety of opto-electronic and/or electronic applications such as lasers, light emitting diodes (LEDs), phototvoltaics, photodetectors and transistors. In an exemplary embodiment, the semiconductor device can be formed by first forming an active-device structure including an active-device section disposed on a thinned III-V substrate. The active-device section can include OP and/or EP VCSEL devices. A high-quality monolithic integration structure can then be formed with low defect density through an interfacial misfit dislocation. In the high-quality monolithic integration structure, a thinned III-V mating layer can be formed over a silicon substrate. The thinned III-V substrate of the active-device structure can subsequently be wafer-bonded onto the thinned III-V mating layer of the high-quality monolithic integration structure forming an optoelectronic semiconductor device on silicon. |
| 公开日期 | 2007-11-29 |
| 申请日期 | 2007-01-11 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/90852]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | STC.UNM |
| 推荐引用方式 GB/T 7714 | HUFFAKER, DIANA L.,DAWSON, LARRY R.,BALAKRISHNAN, GANESH. HYBRID INTEGRATION BASED ON WAFER-BONDING OF DEVICES TO AISb MONOLITHICALLY GROWN ON Si. US20070275492A1. 2007-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。