A semiconductor laser device and a method for manufacturing a semiconductor laser device
文献类型：专利
| 作者 | SILKE TRAUT; STÉPHANIE SAINTENOY |
| 发表日期 | 2013-02-27 |
| 专利号 | GB2494008A |
| 著作权人 | II-VI LASER ENTERPRISE GMBH |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | A semiconductor laser device and a method for manufacturing a semiconductor laser device |
| 英文摘要 | A semiconductor laser device may be for example a vertical cavity surface emitting laser (VCSEL) including a semiconductor substrate 102. The device comprises a passivation layer which may be aluminium oxide (Al 2 O3) arranged on an upper surface of the device structure for resisting moisture ingress. The passivation layer comprises an inner layer 118a deposited on the upper surface of the device by atomic layer deposition and an outer layer 118b deposited on the inner layer, and comprises a material that is inert in the presence of water. The outer layer of the passivation layer may be one of silicon oxynitride, silicon dioxide or silicon nitride, deposited by either plasma-enhanced chemical vapour deposition (PECVD) or atomic layer deposition (ALD) . The total thickness of the passivation layer in a region of the emission window of the device may be half the wavelength of the light emitted from the device in use. The thickness of the inner passivation layer may be in the range from 5 nm-150 nm. The device may be an edge emitting laser. |
| 公开日期 | 2013-02-27 |
| 申请日期 | 2012-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/90858]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | II-VI LASER ENTERPRISE GMBH |
| 推荐引用方式 GB/T 7714 | SILKE TRAUT,STÉPHANIE SAINTENOY. A semiconductor laser device and a method for manufacturing a semiconductor laser device. GB2494008A. 2013-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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