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| 作者 | CARRIE, CARTER-COMAN; R, SCOTT, KERN; FRED, A, KISH, JR; MICHAEL, R., KRAMES; ARTO, V., NURMIKKO; YOON-KYU, SONG
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| 发表日期 | 2000-08-09
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| 专利号 | GB2346480A
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| 著作权人 | AGILENT TECHNOLOGIES INC
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| 国家 | 英国
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| 文献子类 | 发明申请
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| 其他题名 | A wafer bonded AlGaInN structure
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| 英文摘要 | A device, for example a VCSEL, has an AlxGayInzN structure 18 comprising an n- type type layer and a p-type layer constituting an active layer, positioned proximate to a substrate. A first mirror stack 14, interposes the substrate 12 and a bottom side of the AlxGayInzN layer. A wafer bond interface 16, interposes the first mirror stack and a selected one of the substrate and AlxGayInzN structure. There are p and an n contacts 22a, 22b. The p contact is electrically connected to the p-type layer and the n contact is electrically connected to the n-type layer. The substrate may be made from GaP, GaAs, InP or Si. There may be an intermediate bonding layer selected from a group that includes dielectrics and alloys containing halides, ZnO, indium, tin, chrome, gold, nickel, copper, and II-VI materials. One method for fabricating the AlxGayInzN structure comprises; attaching a host substrate to a first mirror stack, fabricating an AlxGayInzN structure on a sacrificial growth substrate and creating a wafer bond interface. The sacrificial growth substrate is then removed and electrical contacts are deposited on to the AlxGayInzN structure. A second method for fabricating an AlxGayInzN structure comprises; fabricating an AlxGayInzN structure to a sacrificial growth substrate and attaching a first mirror stack on top of an AlxGayInzN structure. The host substrate is wafer bonded to the first mirror stack to create a wafer bond interface. The sacrificial growth substrate is then removed and electrical contacts are deposited on the AlxGayInzN structure. Laser melting may be used to remove the substrate. |
| 公开日期 | 2000-08-09
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| 申请日期 | 2000-02-07
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| 状态 | 失效
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| 源URL | [http://ir.opt.ac.cn/handle/181661/91300]  |
| 专题 | 半导体激光器专利数据库
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| 作者单位 | AGILENT TECHNOLOGIES INC
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推荐引用方式
GB/T 7714 |
CARRIE, CARTER-COMAN,R, SCOTT, KERN,FRED, A, KISH, JR,et al. A wafer bonded AlGaInN structure. GB2346480A. 2000-08-09.
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