中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fabrication of electronic devices with an internal window

文献类型:专利

作者VAKHSHOORI, DARYOOSH; WYNN, JAMES DENNIS; ZYDZIK, GEORGE JOHN
发表日期1995-01-11
专利号EP0618625A3
著作权人AT&T CORP.
国家欧洲专利局
文献子类发明申请
其他题名Fabrication of electronic devices with an internal window
英文摘要A process is described of producing devices, such as vertical cavity surface emitting lasen or resonant cavity light emitting devices, with an insulating region between an active region and top electrode, the insulating region having a centrally located window permitting passage of the electric current from the top electrode to the bottom electrode centrally of the active region. The insulating region is formed by ion implantation. The window is defined by a photoresist mask formed by angle etching a photoresist masking layer by RIE, so as to form the mask with parallel side walls inclined at an angle to the normal to the masked surface. The ion implantation is conducted at the same angle and parallel to the side walls of the of the mask. This permits fabrication of devices individually or in arrays. An exemplary independently addressable top emitting 8×18 VCSEL array (VCSELA) with GaAs multi-quantum well gain region was fabricated with excellent properties using the angle etched masks. The typical threshold current and voltage of the exemplary devices in this array are approximately 4 mA and 2.65V respectively. The L-I-V characteristics of the devices do not change by current annealing. Also, a comparison between devices produced by using the novel angled implantation mask and devices produced by using conventional lithography implantation mask indicates the importance of the implantation mask preparation on the final VCSEL operating characteristics.
公开日期1995-01-11
申请日期1994-03-23
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/91401]  
专题半导体激光器专利数据库
作者单位AT&T CORP.
推荐引用方式
GB/T 7714
VAKHSHOORI, DARYOOSH,WYNN, JAMES DENNIS,ZYDZIK, GEORGE JOHN. Fabrication of electronic devices with an internal window. EP0618625A3. 1995-01-11.

入库方式: OAI收割

来源:西安光学精密机械研究所

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