Absorbing layers for reduced spontaneous emission effects in an integrated photodiode
文献类型：专利
| 作者 | GUENTER, JAMES, K.; TATUM, JIMMY, A.; BIARD, JAMES, R. |
| 发表日期 | 2006-07-13 |
| 专利号 | WO2006074011A3 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Absorbing layers for reduced spontaneous emission effects in an integrated photodiode |
| 英文摘要 | An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodio0de to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency. |
| 公开日期 | 2006-07-13 |
| 申请日期 | 2005-12-28 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/91480]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | GUENTER, JAMES, K.,TATUM, JIMMY, A.,BIARD, JAMES, R.. Absorbing layers for reduced spontaneous emission effects in an integrated photodiode. WO2006074011A3. 2006-07-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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