藍-綠激光二極管
文献类型：专利
| 作者 | MICHAEL, A HAASE; HWA CHENG; JAMES M. DEPUYDT; JUN QIU |
| 发表日期 | 1998-06-12 |
| 专利号 | HK1001353A |
| 著作权人 | MINNESOTA MINING AND MANUFACTURING COMPANY |
| 国家 | 中国香港 |
| 文献子类 | 发明申请 |
| 其他题名 | 藍-綠激光二極管 |
| 英文摘要 | A II-VI compound semiconductor laser diode (10) is formed from overlaying layers of material including an n-type single crystal semiconductor substrate (12), adjacent n-type and p-type guiding lasers (14) and (16) of II-VI semiconductor forming a pn junction, a quantum well active layer (18) of II-VI semiconductor between the guiding layers (14) and (16), first electrode (32) opposite the substrate (12) from the n-type guiding layer (14), and a second electrode (30) opposite the p-type guiding layer (16) from the quantum well layer (18). Electrode layer (30) is characterized by a Fermi energy. A p-type ohmic contact layer (26) is doped, with shallow acceptors having a shallow acceptor energy, to a net acceptor concentration of at least 1 x 10 cm, and includes sufficient deep energy states between the shallow acceptor energy and the electrode layer Fermi energy to enable cascade tunneling by charge carriers. |
| 公开日期 | 1998-06-12 |
| 申请日期 | 1998-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/91544]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MINNESOTA MINING AND MANUFACTURING COMPANY |
| 推荐引用方式 GB/T 7714 | MICHAEL, A HAASE,HWA CHENG,JAMES M. DEPUYDT,等. 藍-綠激光二極管. HK1001353A. 1998-06-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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