High contrast grating integrated vcsel using ion implantation
文献类型：专利
| 作者 | CHANG-HASNAIN, CONNIE; CHASE, CHRISTOPHER; RAO, YI |
| 发表日期 | 2011-11-17 |
| 专利号 | WO2011142760A1 |
| 著作权人 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | High contrast grating integrated vcsel using ion implantation |
| 英文摘要 | A Vertical Cavity Surface Emitting Laser (VCSEL) and its fabrication are taught which incorporate a high contrast grating (HCG) to replace the top mirror of the device and which can operate at long-wavelengths, such as beyond 0.85 μm. The HCG beneficially provides a high degree of polarization differentiation and provides optical containment in response to lensing by the HCG. The device incorporates a quantum well active layer, a tunnel junction, and control of aperture width using ion implantation. A tunable VCSEL is taught which controls output wavelength in response to controlling a micro-mechanical actuator coupled to a HCG top mirror which can be moved to, or from, the body of the VCSEL. A fabrication process for the VCSEL includes patterning the HCG using a wet etching process, and highly anisotropic wet etching while precisely controlling temperature and PH. |
| 公开日期 | 2011-11-17 |
| 申请日期 | 2010-05-13 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/91642]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
| 推荐引用方式 GB/T 7714 | CHANG-HASNAIN, CONNIE,CHASE, CHRISTOPHER,RAO, YI. High contrast grating integrated vcsel using ion implantation. WO2011142760A1. 2011-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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